Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...
“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
XDA Developers on MSN
GAAFET and BPD are making CPUs exciting again
Major foundries like Samsung, TSMC, and Intel already have 2nm nodes with GAAFET technology, with Intel calling it RibbonFET, the design used in its 18A node to manufacture the upcoming Panther Lake ...
Analog Bits announced the availability of analog and mixed-signal IP design kits for GlobalFoundries’ 12-nm Leading-Performance (12LP) FinFET semiconductor manufacturing process. The IP portfolio ...
What does it take to make a chip out of paper-based design into billions of functional transistors etched on silicon at the nanometer scale? For Samsung, the answer currently is in terms of yield ...
Synopsys has announced the availability of a portfolio of DesignWare PHY IP for TSMC's 16nm FinFET Plus (16FF+) processes. Cadence Design Systems has announced that its digital and custom/analog tools ...
Samsung has been hit with a $400M fine for failing to license a critical FinFET patent -- and that damage could balloon up to $1.2B at the judge's discretion. Share on Facebook (opens in a new window) ...
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