After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their ...

Researchers develop a 3D transistor stacking process that boosts performance in flexible and wearable electronics without ...

The use of n-type and p-type silicon is a foundation concept in the design of transistors. Pure silicon is not conductive. However, it can be made conductive by adding other elements to its ...

A research team develops high performing p-type transistor using perovskite. Solution-processed metal halide perovskite transistors can now be printed. The printing press has contributed immensely to ...

To meet the growing demands of flexible and wearable electronic systems, such as smart watches and biomedical sensors, ...

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Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...

Researchers report a unipolar n-type transistor with a world-leading electron mobility performance of up to 7.16 cm2 V-1 s-1. This achievement heralds an exciting future for organic electronics, ...

Researchers at the MIT's Microsystems Technology Laboratories (MTL) have developed a germanium p-type transistor whose carrier mobility doubles that of previous experimental p-type transistors and ...